defect detectionDetecting Defects in GaN Wafers Using Optical Profilometry and Machine Learning

Sample fabrication

The P-i-N diodes were fabricated by a process described in our previous work^23,24,25. Two GaN layers were fabricated in-situ using the Taiyo Nippon Sanso MOCVD SR4000HT reactor at Sandia National Laboratories on ten different GaN substrates using metal organic chemical vapor…