Home Tech BeSang Announces High Area-Efficient Storage Capacitor Technology for DRAM

BeSang Announces High Area-Efficient Storage Capacitor Technology for DRAM

“BeSang’s Super R-Stack technology is expected to increase about 15% more capacitance in a given area compared to honeycomb-type storage capacitor layout”

    PORTLAND, OR, June 30, 2020 /24-7PressRelease/ — BeSang Inc., pioneer in monolithic 3D IC technologies in Portland, Oregon, announces Super R-Stack technology for high area-efficient DRAM storage capacitor, which is expected to increase about 15% more capacitance in a given area compared to honeycomb-type storage capacitor. So far, honeycomb-type is being widely used for advanced DRAM products from 20nm to 10nm future sizes and believed it is the most area-efficient capacitor layout for DRAM. Similar to the case of transition from checker-type to honeycomb-type, Super R-Stack is to increase efficiency of storage capacitance with better layout scheme and might be the best if it is combined with BeSang’s 3D DRAM.

“15% more capacitance means jumping about 2 generations of DRAM scaling in the advanced products,” said Sang-Yun Lee, CEO of BeSang Inc. “And I am proud that BeSang provides Super R-Stack storage capacitor solutions along with ultra-low cost 3D DRAM technology solutions. As a result, BeSang has complete solutions for advanced DRAM technologies.”

BeSang is a fabless semiconductor company developing high-density and ultra-low cost semiconductor memory products and technologies along with IP development. The BeSang is headquartered in Hillsboro, Oregon, USA. Additional information is available at www.besang.com.

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